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SiZ902DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
20
V GS = 10 V thru 4 V
16
60
12
40
V GS = 3 V
8
T C = 25 ° C
20
0
4
0
T C = 125 ° C
T C = - 55 ° C
0.0
0.5 1.0 1.5
2.0
0.0
0.5
1.0 1.5 2.0 2.5
3.0
0.008
V DS - Drain-to-Source Voltage (V)
Output Characteristics
3500
3000
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.007
V GS = 4.5 V
C iss
2500
2000
0.006
1500
V GS = 10 V
0.005
1000
C rss
C oss
500
0.004
0
20
40
60
80
0
0
5
10 15 20 25
30
10
I D - Drain Current (A)
On-Resistance vs. Drain Current
1.6
V DS - Drain-to-Source Voltage (V)
Capacitance
8
I D = 20 A
V DS = 7.5 V
1.4
I D = 20 A
V GS = 10 V
V GS = 4.5 V
6
V DS = 15 V
1.2
4
2
0
V DS = 24 V
1.0
0.8
0.6
0
9
18 27 36
45
- 50
- 25
0
25
50
75
100
125
150
www.vishay.com
8
Q g - Total Gate Charge (nC)
Gate Charge
T J - Junction Temperature ( ° C)
On-Resistance vs. Junction Temperature
Document Number: 63465
S11-2380 Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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